Electronic Special Gases
Gas Table
|
Gas |
Applications |
Datasheet |
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Ammonia (NH3) |
Ammonia is used as a reactant gas in the deposition of silicon nitride layers. Ammonia is typically used in conjunction with dichlorosilane or silane. Linde's advanced ammonia purification processes ensure consistency of product with purity specifications exceeding industry standards |
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Argon (Ar) |
Argon is widely used in a broad range of purging, annealing, sputtering, and ion milling applications. Argon is also used as an inerting gas in silicon crystal pulling. Sophisticated purification and cryogenic separation processes ensure product purity levels that meet or exceed industry standards. |
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Arsine (AsH3) |
Arsine is used as an arsenic (N-type dopant) source in chemical vapor deposition (CVD) and ion implantation processes. It is commonly used as the minor component in mixtures. Arsine is also used in the epitaxial deposition of gallium arsenide layers for the fabrication of III-V devices. LINDE's advanced production facility with a dedicated filling system ensures accuracy and consistency of both mixture and pure arsine products. |
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Boron Trichloride (BCl3) |
Boron Trichloride is the preferred gas for the plasma etching of aluminum alloys, tungsten and tungsten silicide. Advanced purification processes ensure consistency of product with purity specifications exceeding industry standards. Liquid phase metal analysis yields a more representative measure of non-volatile impurities. |
/files/products/electronic_special_gases/206250-Boron Trichloride.pdf |
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Boron Trifluoride (BF3) |
Boron Trifluoride is the most widely used gas for ion implantation of the N-type dopant Boron. |
/files/products/electronic_special_gases/206250-Boron Trifluoride.pdf |
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Carbon Dioxide (CO2) |
Carbon Dioxide is used for the oxidation of silicon. CO2 is also used for snow cleaning, a procedure which mechanically removes surface contamination by bombarding the surface to be cleaned with carbon dioxide snow. Linde's CO2 purification process produces high purity carbon dioxide with purity levels exceeding industrial standards. |
/files/products/electronic_special_gases/206250-Carbon Dioxide.pdf |
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Carbon Monoxide (CO) |
Carbon Monoxide is used as an additive for selective etching of oxide films deposited over silicon nitride. |
/files/products/electronic_special_gases/206250-Carbon Monoxide.pdf |
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Chlorine (Cl2) |
Chlorine is used in combination with boron trichloride or silicon tetrachloride to enhance the etching characteristics of the aluminum etch process. It is also used with SF6 for etching titanium tungsten (TiW) structures and is combined with HBr or HCI to etch polysilicon. Advanced purification processes ensure consistency of product with purity specifications exceeding industry standards. Liquid phase metal analysis yields a more representative measure of non-volatile impurities. |
/files/products/electronic_special_gases/206250-Chlorine.pdf |
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Chlorine Trifluoride (ClF3) |
Chlorine Trifluoride is used as a fluorine/chlorine source for plasma etch. ClF3 is most often used for in situ chamber cleaning of CVD reactors in applications such as polysilicon silicon nitride, silicon glass, tungsten silicide and tungsten reactors. |
/files/products/electronic_special_gases/206250-Chlorine Trifluoride.pdf |
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Diborane (B2H6) |
Diborane is used as a boron (P-Type dopant) source in chemical vapor deposition (CVD) or ion implantation processes. Diborane is supplied as a gas mixture only. |
/files/products/electronic_special_gases/206250-Diborane.pdf |
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Dichlorosilane (SiH2Cl2) |
Dichlorosilane is a silicon precursor gas used in combination with ammonia for silicon nitride chemical vapor deposition (CVD). Dichlorosilane is also used for epitaxial silicon deposition. |
/files/products/electronic_special_gases/206250-Dichlorosilane.pdf |
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Disilane (Si2H6) |
Disilane is a silicon precursor used in low pressure chemical vapor deposition (CVD) of silicon nitride, silicon dioxide and polysilicon. Disilane is also used for amorphous silicon films used in solar cells, xerographic photoreceptors and thin film transistors |
/files/products/electronic_special_gases/206250-Disilane.pdf |
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Germane (GeH4) |
Germane is used as a germanium source in the chemical vapor deposition (CVD) of germanium-silicon heterostructures. |
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Halocarbon 14 (CF4) |
Halocarbon 14 is combined with oxygen to etch polysilicon, silicon dioxide, silicon nitride, some metals and metal silicides. It can be combined with Halocarbon 116 (C2F6) or used alone to clean wafers and chambers. |
/files/products/electronic_special_gases/206250-Halocarbon 14.pdf |
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Halocarbon 23 (CHF3) |
Halocarbon 23 is often used in combination with Halocarbon 14 and Halocarbon 116 to improve etch rate, selectivity and uniformity in etching. |
/files/products/electronic_special_gases/206250-Halocarbon 23.pdf |
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Halocarbon 32 (Difluoromethane) (CH2F2) |
Halocarbon 32 is used for plasma etching. It disassociates in the presence of an RF field into reactive fluoride ions. |
/files/products/electronic_special_gases/206250-Halocarbon 32.pdf |
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Halocarbon 41 (CH3F) |
Halocarbon 41 disassociates in the presence of an RF field into reactive fluoride ions. These ions react with and etch silicon compound films. |
/files/products/electronic_special_gases/206250-Halocarbon 41.pdf |
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Halocarbon 116 (C2F6) |
Halocarbon 116 is used for plasma etching of silicon, silicon compounds and cleaning of process chambers. |
/files/products/electronic_special_gases/206250-Halocarbon 116.pdf |
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Halocarbon 218 (Perfluoropropane) (C3F8) |
Halocarbon 218 is used for plasma etching. The chemical composition of Halocarbon 218 (C3F8) supplies a higher ratio of fluorine to carbon than any of the other halocarbon gases supplied by Linde . When Halocarbon 218 is exposed to the RF field generated in the etch process, a gas plasma is produced that will etch silicon dioxide or silicon nitride with excellent selectivity. |
/files/products/electronic_special_gases/206250-Halocarbon 218.pdf |
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Halocarbon 318 (C4F8) |
Halocarbon 318 is used for plasma etching. When Halocarbon 318 is exposed to the RF field generated in the etch process, a gas plasma is produced that will etch silicon compounds with excellent selectivity. |
/files/products/electronic_special_gases/206250-Halocarbon 318.pdf |
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Halocarbon 2316 (C4F6) |
Halocarbon 2316 is used in critical etch processes to etch dielectric materials, especially in sub-0.13 micron devices |
/files/products/electronic_special_gases/206250-Halocarbon 2316.pdf |
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Halocarbon c1418 (c-C5F8) |
Halocarbon c1418 is commonly used in critical etch processes to etch dielectric materials, especially in sub-0.13 micron processes. |
/files/products/electronic_special_gases/206250-Halocarbon c1418.pdf |
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Helium (He) |
Helium is used in a broad range of purging, annealing, sputtering, leak checking and etching applications. It is also used for back side temperature control to maintain uniform and repeatable wafer temperature during critical deposition processes, such as WF6 chemical vapor deposition (CVD), and ion implantation |
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Hydrogen (H2) |
Hydrogen is used as a reactant gas with trichlorosilane to form epitaxial silicon. Thermal oxides are grown using H2O produced from the combustion of high purity hydrogen and oxygen. Hydrogen is also used as a reducing gas to scavenge oxygen which prevents the formation of silicon dioxide as an impurity in the epitaxial silicon layer. Hydrogen is also used as a major component in doping gas mixtures employed in sensitive chemical vapor deposition (CVD) applications. Sophisticated purification processes and analytical methods guarantee purity levels meeting rigorous specifications. |
/files/products/electronic_special_gases/206250-Hydrogen.pdf |
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Hydrogen (H2) |
Hydrogen is used as a reactant gas with trichlorosilane to form epitaxial silicon. Thermal oxides are grown using H2O produced from the combustion of high purity hydrogen and oxygen. Hydrogen is also used as a reducing gas to scavenge oxygen which prevents the formation of silicon dioxide as an impurity in the epitaxial silicon layer. Hydrogen is also used as a major component in doping gas mixtures employed in sensitive chemical vapor deposition (CVD) applications. Sophisticated purification processes and analytical methods guarantee purity levels meeting rigorous specifications. |
/files/products/electronic_special_gases/206250-Hydrogen.pdf |
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Hydrogen Bromide (HBr) |
Hydrogen Bromide is used in combination with hydrogen chloride and chlorine for plasma etching of polysilicon. Advanced purification processes ensure consistency of product with purity specifications exceeding industry standards. Liquid phase metal analysis yields a more representative measure of non-volatile impurities. |
/files/products/electronic_special_gases/206250-Hydrogen Bromide.pdf |
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Hydrogen Chloride (HCl) |
Hydrogen Chloride is used for plasma and thermal etching of silicon and gallium arsenide wafer surfaces prior to epitaxial silicon and gallium arsenide growth. Hydrogen Chloride is also used as an additive to polysilicon etching. |
/files/products/electronic_special_gases/206250-Hydrogen Chloride.pdf |
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Hydrogen Fluoride (HF) |
Hydrogen Fluoride is employed as an etching agent in the removal of native oxide from silicon wafers in preparation for deposition processes. It is also used for plasma cleaning of chemical vapor deposition (CVD) reactors where silicon, silicon compounds and other materials have deposited on the internal surfaces and associated parts. |
/files/products/electronic_special_gases/206250-Hydrogen Fluoride.pdf |
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Monomethylsilane (MMS) |
Monomethylsilane is used as a carbon precursor in the development of silicon germanium carbon thin films by chemical vapor deposition (CVD). Linde’s in-house synthesis and purification processes and sophisticated analytical methods guarantee purity levels meeting rigorous specifications. |
/files/products/electronic_special_gases/206250-Methylsilane.pdf |
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Nitrogen (N2) |
Nitrogen is used in a broad range of inerting applications. Sophisticated purification and cryogenic separation processes guarantee purity levels meeting rigorous specifications. |
/files/products/electronic_special_gases/206250-Nitrogen.pdf |
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Nitrogen Trifluoride (NF3) |
Nitrogen Trifluoride is used as a fluorine source for plasma etch. It is most often used for in situ chamber cleaning of CVD reactors. Applications also include etching of polysilicon, silicon nitride, tungsten silicide and tungsten films. Our South African plant is dedicated to the production of NF3, providing a global supply for the semiconductor industry. |
/files/products/electronic_special_gases/206250-Nitrogen Trifluoride.pdf |
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Nitric Oxide (NO) |
Linde is currently updating the specifications for Nitric Oxide. A local Linde Electronics representative would be happy to assist you. |
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Nitrous Oxide (N20 |
Nitrous Oxide is used in combination with silane for chemical vapor deposition (CVD) of silicon nitride layers. Complementing the grade of silane with a corresponding purity level of nitrous oxide is essential to preventing degradation of the combined deposition gases. Nitrous oxide is also used in rapid thermal processing to grow high quality gate oxides. Sophisticated purification processes and analytical methods guarantee purity levels meeting rigorous specifications. |
/files/products/electronic_special_gases/206250-Nitrous Oxide.pdf |
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Oxygen (O2) |
High purity oxygen is used in a broad range of oxidation, plasma etching, and chemical vapor deposition (CVD) processes. Sophisticated purification and cryogenic separation processes guarantee purity levels meeting rigorous specifications. |
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Phosphine (PH3) |
In silicon processing, phosphine is used as a phosphorus (N-type dopant) source in chemical vapor deposition (CVD) and ion implantation. Commonly used in the electronics industry as the minor component in a mixture, both the phosphine purity and consistency of the mixture are crucial to the manufacture and performance of semiconductor devices. Phosphine is also used in gallium arsenide as an ion implantation gas in the manufacture of light emitting diodes (LEDs). |
/files/products/electronic_special_gases/206250-Phosphine.pdf |
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Silane (SiH4) |
Silane is used as a silicon precursor used in chemical vapor deposition (CVD) of silicon dioxide, silicon nitride, polysilicon, epitaxial silicon and amorphous silicon films. Silane is produced in our Medford, OR electronic materials plant. Medford is one of the world’s most advanced semiconductor process gas production facilities. |
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Silicon Tetrafluoride (SiF4) |
Silicon tetrafluoride is used to etch metal silicides, silicon and polysilicon films. It disassociates in the presence of an RF field to produce reactive fluoride ions which react with and etch the silicon films. Silicon tetrafluoride demonstrates isotropic etching with good selectivity over silicon dioxide and silicon nitride. It is used for these applications in the pure state and in oxygen mixtures as well as a precursor in the deposition of silicon nitride films. |
/files/products/electronic_special_gases/206250-Silicon Tetrafluoride.pdf |
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Sulfur Hexafluoride (SF6) |
Sulfur hexafluoride is used for plasma etching prior to chemical vapor deposition (CVD). These processes include oxide etching, nitride etching and wafer cleaning. Sulfur hexafluoride gas, which is itself inert, disassociates in the presence of an RF field to form reactive fluoride ions. These highly reactive ions are excellent for etching tungsten and tungsten silicide films. |
/files/products/electronic_special_gases/206250-Sulfur Hexafluoride.pdf |
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Trichlorosilane (SiHCl3) |
The starting point for semiconductor MOS technology is an epitaxial layer of silicon with very specific purity. High purity trichlorosilane is used in the epitaxial deposition process to achieve this high purity single crystal layer. |
/files/products/electronic_special_gases/206250-Trichlorosilane.pdf |
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PureFilm Trimethylsilane (3MS) |
Linde PureFilm Trimethylsilane provides an improved specification of 99.999% over industry standard purity and competitive pricing that includes the Dow Corning Corporation use license. Trimethylsilane is used in CVD processes for the development of low k dielectric thin film. Advanced purification processes ensure consistency of product with purity specifications exceeding industry standards. |
/files/products/electronic_special_gases/206250-Trimethylsilane.pdf |
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Tungsten Hexafluoride (WF6) |
Tungsten Hexafluoride is used for the chemical vapor deposition (CVD) of tungsten and tungsten silicide layers. Advanced purification processes ensure consistency of product with purity specifications exceeding industry standards. Liquid phase metal analysis yields a more representative measure of non-volatile impurities. |
/files/products/electronic_special_gases/206250-Tungsten Hexafluoride.pdf |
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